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G. Sanchez1, J. L. Castaño1, J. Garrido1, J. Martinez1 and J. Piqueras1
© 1991 ECS - The Electrochemical Society
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Citation G. Sanchez et al 1991 J. Electrochem. Soc. 138 3039
DOI 10.1149/1.2085362
2 Total downloads
Direct writing laser doping from doped spun‐on glasses is reported. Under quasistationary regime, diffusion depths over 1 μm can be controlled across the laser power. Sheet resistances from below 20 up to 600 Ω/□ for boron‐diffused samples and up to 1600 Ω/□ for phosphorus‐diffused samples have been obtained for different processing laser powers.
