Abstract
In this work, we demonstrate the use of HWCVD as an alternative technique to grow SiN layers for photonic waveguides at temperatures <400ºC. In particular, the effect of the ammonia flow and the filament temperature on the material structure, optical properties and propagation losses of the deposited films was investigated. SiN layers with good thickness uniformity, roughness as low as 0.61nm and H concentration as low as 10.4x1021 atoms/cm3 were obtained. Waveguides fabricated on the studied materials exhibited losses as low as 7.1 and 12.3 dB/cm at 1310 and 1550nm respectively.