Abstract
Bottom-gate, bottom-contact organic thin-film transistors (OTFTs) based on 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated on flexible substrates by transfer-printing and solution-based processes and their performances were characterized. Au gate and source/drain electrodes were transfer-printed from a release-layer-coated flexible mold at 2.4 MPa and 120 °C in ambient air. A polymer gate dielectric of poly(4-vinyl phenol) (PVP) and an active layer of TIPS-pentacene were deposited by solution processing. In addition, the TFT characteristics in channels of 40 and 4 µm length were compared. Also, the lack of saturation of the drain–source current (IDS) was investigated by considering the output characteristics in a short channel.