Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes

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Published 11 October 2005 Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Hyuck Soo Yang et al 2005 Jpn. J. Appl. Phys. 44 7296 DOI 10.1143/JJAP.44.7296

1347-4065/44/10R/7296

Abstract

We report on the fabrication of UV light-emitting diodes (LEDs) based on a pn junction n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/ p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.

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