Low Temperature Growth of Epitaxial La0.8Sr0.2MnO3 Thin Films by an Excimer-Laser-Assisted Coating Pyrolysis Process

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Published 1 August 2003 Copyright (c) 2003 The Japan Society of Applied Physics
, , Citation Tetsuo Tsuchiya et al 2003 Jpn. J. Appl. Phys. 42 L956 DOI 10.1143/JJAP.42.L956

1347-4065/42/8A/L956

Abstract

The preparation of La0.8Sr0.2MnO3 (LSMO) films on a LaAlO3 (LAO) substrate has been investigated by an excimer-laser-assisted coating pyrolysis process (ELACPP) in the temperature range from 350 to 500°C. (00l) oriented LSMO films were successfully obtained by ArF laser irradiation at 100 mJ/cm2 in the substrate temperature range from 400 to 500°C. The films prepared at 500°C on the LAO substrate were found to be epitaxially grown based on X-ray diffraction (XRD) pole-figure measurements. The temperature dependence of the resistance of the LSMO film prepared at 400°C showed a semiconducting behavior. On the other hand, that prepared at 500°C showed a metallic behavior from 310 K to 100 K and the absolute magnitude of the resistivity of the film at 300 K was 2.6×10-2 Ω·cm.

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10.1143/JJAP.42.L956