Performance and Loss Analyses of High-Efficiency Chemical Bath Deposition (CBD)-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells

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Copyright (c) 2002 The Japan Society of Applied Physics
, , Citation Alexei Pudov et al 2002 Jpn. J. Appl. Phys. 41 L672 DOI 10.1143/JJAP.41.L672

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Author affiliations

1 Department of Physics, Colorado State University, Fort Collins, CO 80523, U.S.A.

2 Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya-ku, Tokyo 157-8572, Japan

Dates

  1. Received 25 February 2002
  2. Accepted 10 May 2002

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1347-4065/41/6B/L672

Abstract

Chemically deposited ZnS has been investigated as a buffer layer alternative to cadmium sulfide (CdS) in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency of up to 18.1% based on chemical bath deposition (CBD)-ZnS/CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current–voltage (J–V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the CBD-ZnS/CIGS cell and the superior junction quality of the CBD-CdS/CIGS cell on overall performance nearly cancel each other.

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10.1143/JJAP.41.L672