From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects

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Copyright (c) 1994 The Japan Society of Applied Physics
, , Citation Ya-Hong Xie et al 1994 Jpn. J. Appl. Phys. 33 2372 DOI 10.1143/JJAP.33.2372

1347-4065/33/4S/2372

Abstract

We review the current status of relaxed GeSi buffer layers, high-mobility two-dimensional electron and hole gases fabricated on top of these layers, and GeSi-based field effect transistors (FETs). Recent progress in these fields is emphasized. A brief summary is then given for a variety of GeSi-based FET fabrications to date. Finally, the future prospects of GeSi-based FETs to be integrated into Si VLSI production is discussed.

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10.1143/JJAP.33.2372