Abstract
We report the fabrication of electrical conductive tin-doped α-Ga2O3 thin films on c-plane sapphire substrates. The mist chemical vapor deposition method brought tin-doped α-Ga2O3 thin films with high crystallinity without noticeable other phases, as highlighted by the full-width of X-ray diffraction ω-scan rocking curves as small as 40 arcsec, for the tin atomic density in the film upto ∼1020 cm-3. The resistivity decreased by more doping of tin, and the α-Ga2O3 thin film with minimum resistivity exhibited n-type conductivity with the Hall mobility of 2.8 cm2 V-1 s-1 and the carrier density of 2.7 ×1019 cm-3.
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