Abstract
Highly crystalline α-phase gallium oxide (Ga2O3) thin films were grown by fine-channel mist chemical vapor deposition on c-sapphire substrates at 400 °C at a deposition rate of more than 20 nm/min. The thin films were doped with Sn(IV) atoms, which were obtained from Sn(II) chloride by the reaction SnCl2+ H2O2+ 2HCl→SnCl4+ 2H2O. Conductive α-phase Ga2O3 thin films were successfully grown from source solutions containing less than 10 at. % Sn(IV). The source solution containing 4 at. % Sn(IV) resulted in obtaining a thin film with an n-type conductivity as high as 0.28 S cm-1, a mobility of 0.23 cm2 V-1 s-1, a carrier concentration of 7×1018 cm-3, and a full width at half maximum (FWHM) of the (0006) reflection X-ray rocking curve as low as 64 arcsec.