Estimation of the Mobility-Lifetime Products in Amorphous Silicon in the Presence of Dispersive Transport

Copyright (c) 1994 The Japan Society of Applied Physics
, , Citation Jiang-Huai Zhou Jiang-Huai Zhou 1994 Jpn. J. Appl. Phys. 33 L1655 DOI 10.1143/JJAP.33.L1655

1347-4065/33/12A/L1655

Abstract

Applying the intuitive multiple trapping theory, we have calculated the time-of-flight (TOF) charge-collection µτ product, (µτ)cc, under the condition of dispersive transport and find that (µτ)cc=(1/α-α)µ0τfd≈µ0τfd, where α is a temperature-dependent constant, µ0 is the free-carrier mobility, and τ fd is the TOF charge-collection free-carrier deep-trapping time. The steady-state photoconductivity µτ product, (µτ)ss, is argued to be (µτ)ss0τfr where τfr is the steady-state free-carrier recombination lifetime. As a result, (µτ)ss/(µτ)cc≈τfrfd. Our calculation shows that the presence of dispersive transport does not affect the ratio of (µτ)ss and (µτ)cc, and that the difference between (µτ)ss and (µτ)cc is due almost entirely to a difference between the free-carrier recombination lifetime in the steady state and the free-carrier deep-trapping time in the TOF charge-collection experiment. The origin of the difference between (µτ)ss and (µτ)cc is discussed.

Export citation and abstract BibTeX RIS

10.1143/JJAP.33.L1655