Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers

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Published 5 September 2012 ©2012 The Japan Society of Applied Physics
, , Citation Casey Holder et al 2012 Appl. Phys. Express 5 092104 DOI 10.1143/APEX.5.092104

1882-0786/5/9/092104

Abstract

Electrically injected, single-longitudinal-mode nonpolar m-plane vertical-cavity surface-emitting lasers (VCSELs) are reported with a room-temperature lasing wavelength of 411.9 nm, a full width at half maximum (FWHM) of 0.25 nm, and a peak output power of 19.5 µW under pulsed conditions. The polarization direction of the VCSELs is consistently oriented along the [1210] a-direction. The degree of polarization increases from 0.13 below threshold to 0.72 above threshold. A process is demonstrated that utilizes bandgap-selective photoelectrochemical (PEC) undercut etching of an intracavity-embedded In0.12Ga0.88N sacrificial layer to achieve precise cavity length control and allow for top and bottom dielectric distributed Bragg reflector (DBR) mirrors.

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10.1143/APEX.5.092104