Large Chip High Power Deep Ultraviolet Light-Emitting Diodes

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Published 28 May 2010 • ©2010 The Japan Society of Applied Physics
, , Citation Max Shatalov et al 2010 Appl. Phys. Express 3 062101 DOI 10.1143/APEX.3.062101

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Author affiliations

1 Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, U.S.A.

2 Department of Electrical, Computer, and Systems Engineering and Center of Integrated Electronics, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, New York 12180, U.S.A.

3 U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, U.S.A.

Dates

  1. Received 10 April 2010
  2. Accepted 8 May 2010
  3. Published

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Abstract

Single chip deep ultraviolet light-emitting diodes with junction area up to 1 mm2 were fabricated for high power applications. Lateral geometry devices were designed for low operating voltage, uniform current spreading and emission resulting in substantial improvement of high current performance. The maximum CW optical power of 30 and 6 mW was achieved for devices emitting at 273 and 247 nm, respectively.

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