Abstract
We proposed a kinetic model for thermal oxidation of silicon carbide, termed "silicon and carbon emission model", taking into account the Si and C emissions from the oxidation interface, which lead to a reduction of interfacial reaction rate. We used this model to calculate oxide growth rates and found that the derived growth rates showed a good fit with the measured rates over the entire oxide thickness for both the C and Si faces. We discussed the difference in oxidation mechanism between these polar faces in terms of the difference in parameter values deduced from the curve fits.