Abstract.
We report on a Raman study of the phonon spectrum of La 0.7Sr0.3MnO3 thin films epitaxially grown on LaAlO3. The spectrum, as a function of film thickness d, does not change over the 1000–100 Å range, whereas a strong hardening of the phonon frequencies of both bending and stretching modes is apparent in ultra-thin films (d<100 Å) where substrate-induced effects are remarkable. This behaviour, which appears to be related with the measured d-dependence of the insulator-to-metal transition temperature, is ascribed to co-operative effects of MnO6 octahedra rotation and charge-localization. Raman spectroscopy proves to be a simple and powerful tool to monitor subtle structural modifications hardly detectable with conventional diffraction techniques in ultra-thin films.
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Dore, P., Postorino, P., Sacchetti, A. et al. Raman measurements on thin films of the La0.7Sr0.3MnO3 manganite: a probe of substrate-induced effects. Eur. Phys. J. B 48, 255–258 (2005). https://doi.org/10.1140/epjb/e2005-00401-3
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DOI: https://doi.org/10.1140/epjb/e2005-00401-3