Structural properties of the epitaxial (SiC)_{1 − x} (AlN) _x solid solution films fabricated by magnetron sputtering of SiC-Al composite targets

Abstract

Epitaxial layers of the (SiC)_{1 − x} (AlN) _x solid solution with x ≈ 0.12 and x = 0.64 without macroscopic structural distortions were grown using a new technique. It was established that the compositional dependences of crystal lattice parameters of the epitaxial films obey the Vegard’s law with an error of ∼0.03. This confirms that there is formation of isomorphic substitutional solid solutions in the SiC-AlN system.