Abstract
The influence of the method used for preparing As2Se3 amorphous layers on the processes of charge transfer and charge accumulation in these structures is studied. Different physical parameters, such as the contact capacitance, the width of the charge accumulation region, and the time of transit of charge carriers through the samples, which characterize the occurring electronic processes, are determined for the layers under investigation.
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Original Russian Text © R.A. Castro, V.A. Bordovsky, G.I. Grabko, 2009, published in Fizika i Khimiya Stekla.
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Castro, R.A., Bordovsky, V.A. & Grabko, G.I. Investigation of the processes of charge transfer and charge accumulation in As2Se3 amorphous layers prepared by different methods. Glass Phys Chem 35, 43–46 (2009). https://doi.org/10.1134/S1087659609010064
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DOI: https://doi.org/10.1134/S1087659609010064