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Resonant Bolometric Detection of Broadband Terahertz Signals

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Abstract

Bolometric detection of broadband terahertz radiation using a heterostructure consisting of a sequence of conducting and dielectric layers of a doped and undoped semiconductor (gallium arsenide, germanium) is discussed. This structure comprises a photonic crystal with allowed and forbidden (absorption and transmission) bands. By choosing the thicknesses of the conducting and nonconducting layers and the doping levels, it is possible to form spectral intervals of effective absorption, which allows one to detect pulses in the range of frequencies of ≥1012 Hz with a spectral width on the order of the carrier frequency.

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Funding

The work of A.V. Bogatskaya and P.M. Nikiforova was supported by the Russian Federation Presidential grant, no. MK-1932.2020.2. Analysis of the interaction of electromagnetic waves with thin layers of a doped semiconductor was supported by the Russian Science Foundation, grant no. 20-69-47013. N.V. Klenov is the winner of the grant competition of the Vladimir Potanin Scholarship Program for 2020/2021.

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Authors and Affiliations

  1. Faculty of Physics, Moscow State University, 119991, Moscow, Russia

    A. V. Bogatskaya, N. V. Klenov, P. M. Nikiforova & A. M. Popov

  2. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    A. V. Bogatskaya & A. M. Popov

  3. Moscow Technical University of Communications and Informatics, 111024, Moscow, Russia

    N. V. Klenov & A. E. Schegolev

  4. Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991, Moscow, Russia

    N. V. Klenov, P. M. Nikiforova & A. E. Schegolev

Authors
  1. A. V. Bogatskaya
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  2. N. V. Klenov
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  3. P. M. Nikiforova
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  4. A. M. Popov
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  5. A. E. Schegolev
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Corresponding author

Correspondence to N. V. Klenov.

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The authors declare that they have no conflicts of interest.

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Translated by E. Chernokozhin

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Bogatskaya, A.V., Klenov, N.V., Nikiforova, P.M. et al. Resonant Bolometric Detection of Broadband Terahertz Signals. Tech. Phys. Lett. 47, 838–842 (2021). https://doi.org/10.1134/S1063785021090029

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  • DOI: https://doi.org/10.1134/S1063785021090029

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