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Hexagonal structures in GaAs nanowhiskers

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Abstract

We have studied the crystal structure of GaAs nanowhiskers grown by molecular beam epitaxy (MBE) on gold-activated GaAs(111)B substrates. The results of reflection high-energy electron diffraction and transmission electron microscopy showed that the MBE-grown GaAs nanowhiskers can form a crystal structure of sphalerite, wurtzite, or an intermediate phase close to 4H polytype, depending on the deposition conditions and the size of catalyst droplets. The results are interpreted within the framework of a thermodynamic model.

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Authors and Affiliations

  1. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia

    I. P. Soshnikov, G. E. Cirlin, V. G. Dubrovskii & Yu. B. Samsonenko

  2. St. Petersburg Center for Research and Education in Physics and Technology, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. P. Soshnikov

  3. Institute of Analytical Instrument Building, Russian Academy of Sciences, St. Petersburg, Russia

    N. V. Sibirev

  4. Technical University of Karlsruhe, D-76128, Karlsruhe, Germany

    D. Litvinov & D. Gerthsen

Authors
  1. I. P. Soshnikov
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  2. G. E. Cirlin
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  3. N. V. Sibirev
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  4. V. G. Dubrovskii
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  5. Yu. B. Samsonenko
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  6. D. Litvinov
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  7. D. Gerthsen
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Corresponding author

Correspondence to N. V. Sibirev.

Additional information

Original Russian Text © I.P. Soshnikov, G.E. Cirlin, N.V. Sibirev, V.G. Dubrovskii, Yu.B. Samsonenko, D. Litvinov, D. Gerthsen, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 12, pp. 88–94.

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Soshnikov, I.P., Cirlin, G.E., Sibirev, N.V. et al. Hexagonal structures in GaAs nanowhiskers. Tech. Phys. Lett. 34, 538–541 (2008). https://doi.org/10.1134/S1063785008060278

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  • DOI: https://doi.org/10.1134/S1063785008060278

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