Abstract—
Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.
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ACKNOWLEDGMENTS
TEM and HR-PEM studies have been conducted using the equipment of the Federal Joint Research Center “Materials and Characteristics in Advanced Technologies” with the support of the Ministry of Education and Science of the Russian Federation (ID RFMEFI62117X0018).
The authors are grateful to I.N. Trapeznikova for her help in recording absorption spectra.
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Aleshin, A.N., Shcherbakov, I.P., Kirilenko, D.A. et al. Light-Emitting Field-Effect Transistors Based on Composite Films of Polyfluorene and CsPbBr3 Nanocrystals. Phys. Solid State 61, 256–262 (2019). https://doi.org/10.1134/S1063783419020021
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DOI: https://doi.org/10.1134/S1063783419020021