Abstract
The properties of polycrystalline CdTe with a grain size of 5–30 μm have been investigated using the microphotoluminescence methods of spectral analysis and topography. This material has been prepared by direct synthesis in a vapor flow of components at a low temperature. The dominance of the Y and Z bands in the spectra reflects a nonequilibrium character of the crystallization processes. The superlinear dependences of the luminescence intensity on the level of the band-to-band excitation indicate the exciton nature of the corresponding transitions. The activation energies for temperature quenching of luminescence in the temperature range T = 100–150 K are found to be 120 meV for the Y luminescence and 180 meV for the Z luminescence, which correspond to the dissociation of excitons bound to defects with the transition of charge carriers to the conduction and valence bands. The monochromatic topography data indicate that Y and Z defects have different material bases.
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Original Russian Text © V.V. Ushakov, Yu.V. Klevkov, 2010, published in Fizika Tverdogo Tela, 2010, Vol. 52, No. 11, pp. 2195–2200.
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Ushakov, V.V., Klevkov, Y.V. Y and Z luminescence of polycrystalline cadmium telluride. Phys. Solid State 52, 2345–2351 (2010). https://doi.org/10.1134/S106378341011020X
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DOI: https://doi.org/10.1134/S106378341011020X