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Statics and dynamics of excited states of oxygen-deficient centers in SiO2

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Abstract

The parameters of excited states of oxygen-deficient centers (ODCs) in high-energy-electron irradiated crystalline and glassy SiO2 have been studied using optical absorption, luminescence, and photoelectron emission spectroscopy. Additional evidence has been gained in support of the model of a neutral oxygen vacancy in ODCs, the diagram of electronic transitions has been refined, and their characteristics have been quantified. The possibility of ionization of the singlet and triplet defect states at a transition to the anomalously relaxed configuration has been demonstrated using the particular example of α-ODCs. Nonradiative excitation transfer from nonbridging oxygen centers to the triplet ODC state has been observed.

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  1. Yeltsin Ural State Technical University (UPI), ul. Mira 19, Yekaterinburg, 620002, Russia

    A. F. Zatsepin

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  1. A. F. Zatsepin
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Original Russian Text © A.F. Zatsepin, 2010, published in Fizika Tverdogo Tela, 2010, Vol. 52, No. 6, pp. 1104–1114.

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Zatsepin, A.F. Statics and dynamics of excited states of oxygen-deficient centers in SiO2 . Phys. Solid State 52, 1176–1187 (2010). https://doi.org/10.1134/S1063783410060107

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