Abstract
A method of formation of two-dimensional structures containing a δ〈Mn〉-doped layer in GaAs and an InxGa1−x As quantum well (QW) separated by a GaAs spacer of thickness d = 4–6 nm is developed using laser evaporation of a metallic target during MOS hydride epitaxy. It is shown that, up to room temperature, these structures have ferromagnetic properties most likely caused by MnAs clusters. At low temperatures (T m ∼ 30 K), the anomalous Hall effect is revealed to occur. This effect is related to hole scattering by Mn ions in GaAs and to the magnetic exchange between these ions and QW holes, which determines the spin polarization of the holes. The behavior of the negative magnetoresistance of these structures at low temperatures indicates the key role of quantum interference effects.
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Original Russian Text © B.A. Aronzon, A.B. Granovsky, A.B. Davydov, Yu.A. Danilov, B.N. Zvonkov, V.V. Ryl’kov, E.A. Uskova, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 1, pp. 165–171.
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Aronzon, B.A., Granovsky, A.B., Davydov, A.B. et al. Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs. Phys. Solid State 49, 171–177 (2007). https://doi.org/10.1134/S1063783407010271
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DOI: https://doi.org/10.1134/S1063783407010271