Abstract
We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.
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Lebedev, D.V., Kalyuzhnyy, N.A., Mintairov, S.A. et al. Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy. Semiconductors 52, 497–501 (2018). https://doi.org/10.1134/S1063782618040206
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DOI: https://doi.org/10.1134/S1063782618040206