Abstract
The formation of porous silicon (por-Si) layers by the galvanic etching of single-crystal Si samples (doped with boron or phosphorus) in an HF/C2H5OH/H2O2 solution is investigated. The por-Si layers are analyzed by the capillary condensation of nitrogen and scanning electron microscopy (SEM). The dependences of the morphological characteristics of por-Si (pore diameter, specific surface area, pore volume, and thickness of the pore walls), which determine the por-Si combustion kinetics, on the dopant type and initial wafer resistivity are established.
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Original Russian Text © O.V. Pyatilova, S.A. Gavrilov, Yu.I. Shilyaeva, A.A. Pavlov, Yu.P. Shaman, A.A. Dudin, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 182–186.
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Pyatilova, O.V., Gavrilov, S.A., Shilyaeva, Y.I. et al. Influence of the doping type and level on the morphology of porous Si formed by galvanic etching. Semiconductors 51, 173–177 (2017). https://doi.org/10.1134/S1063782617020178
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DOI: https://doi.org/10.1134/S1063782617020178