Abstract
Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 μm.
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Original Russian Text © N.V. Kryzhanovskaya, A.E. Zhukov, A.M. Nadtochy, M.V. Maximov, E.I. Moiseev, M.M. Kulagina, A.V. Savelev, E.M. Arakcheeva, A.A. Lipovskii, F.I. Zubov, A. Kapsalis, C. Mesaritakis, D. Syvridis, A. Mintairov, D. Livshits, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 10, pp. 1396–1399.
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Kryzhanovskaya, N.V., Zhukov, A.E., Nadtochy, A.M. et al. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region. Semiconductors 47, 1387–1390 (2013). https://doi.org/10.1134/S1063782613100187
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DOI: https://doi.org/10.1134/S1063782613100187