Abstract
The distribution of hydrostatic strains in Bi3+-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi → As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.
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Original Russian Text © R.M. Peleshchak, S.K. Guba, O.V. Kuzyk, I.V. Kurilo, O.O. Dankiv, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 3, pp. 324–328.
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Peleshchak, R.M., Guba, S.K., Kuzyk, O.V. et al. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices. Semiconductors 47, 349–353 (2013). https://doi.org/10.1134/S1063782613030196
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DOI: https://doi.org/10.1134/S1063782613030196