Abstract
It is shown that PbTe:V single crystals are photosensitive in the terahertz spectral region up to the wavelength 280 μm. The measurements are conducted in the temperature range from 8 to 300 K. In this temperature range, the dark conductivity of the crystals exhibits the activation character of the temperature dependence and varies by four orders of magnitude, which is due to Fermi-level pinning 20 meV below the bottom of the conduction band. As the temperature is elevated and, correspondingly, the conductivity increases, the amplitude of the photoresponse substantially increases. This result is interpreted in the context of the model that takes into account significant broadening of the vanadium impurity level and its shift to the bottom of the conduction band with increasing temperature.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Lead Chalcogenides: Physics and Applications, Ed. by D. Khokhlov (Taylor Francis, New York, 2003).
B. A. Volkov, L. I. Ryabova, and D. R. Khokhlov, Phys. Usp. 45, 819 (2002).
L. I. Ryabova and D. R. Khokhlov, JETP Lett. 80, 133 (2004).
A. A. Vinokurov, A. I. Artamkin, S. G. Dorofeev, T. A. Kuznetsova, and V. P. Zlomanov, Inorg. Mater. 44, 576 (2008).
E. P. Skipetrov, E. A. Zvereva, A. E. Primenko, O. A. Savelieva, N. A. Pichugin, A. N. Golovanov, V. V. Gorbachev, V. P. Zlomanov, and A. A. Vinokurov, Moldav. J. Phys. Sci. 8, 63 (2009).
A. I. Artamkin, A. A. Dobrovol’skii, A. A. Vinokurov, V. P. Zlomanov, S. Yu. Gavrilkin, O. M. Ivanenko, K. V. Mitsen, L. I. Ryabova, and D. R. Khokhlov, Semiconductors 44, 1543 (2010).
A. I. Belogorokhov, B. A. Volkov, I. I. Ivanchik, and D. R. Khokhlov, JETP Lett. 72, 123 (2000).
N. Romcevic, M. Romcevic, I. Ivanchik, and D. Khokhlov, Infrared Phys. Technol. 40, 453 (1999).
M. Romcevic, N. Romcevic, D. R. Khokhlov, and I. I. Ivanchik, J. Phys.: Condens. Matter 12, 8737 (2000).
E. P. Skipetrov, A. N. Golovanov, E. A. Zvereva, E. I. Slyn’ko, and V. E. Slyn’ko, Physica B 404, 5262 (2009).
D. Khokhlov, L. Ryabova, A. Nicorici, V. Shklover, S. Ganichev, S. Danilov, and V. Bel’kov, Appl. Phys. Lett. 93, 264103 (2008).
A. V. Galeeva, L. I. Ryabova, A. V. Nikorich, S. D. Ganichev, S. N. Danilov, V. V. Bel’kov, and D. R. Khokhlov, JETP Lett. 91, 35 (2010).
S. D. Ganichev, S. A. Emel’yanov, and I. D. Yaroshetskii, JETP Lett. 35, 368 (1982).
S. D. Ganichev, S. N. Danilov, V. V. Bel’kov, S. Giglberger, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, W. Jantsch, F. Scheffer, D. Gruber, and W. Prettl, Phys. Rev. B 75, 155317 (2007).
P. Schneider, J. Kainz, S. D. Ganichev, V. V. Bel’kov, S. N. Danilov, M. M. Glazov, L. E. Golub, U. Rossler, W. Wegscheider, D. Weiss, D. Schuh, and W. Prettl, J. Appl. Phys. 96, 420 (2004).
S. D. Ganichev, Ya. V. Terent’ev, and I. D. Yaroshetskii, Sov. Tech. Phys. Lett. 11, 20 (1985).
E. P. Skipetrov, A. N. Golovanov, B. B. Kovalev, A. V. Knotko, E. I. Slyn’ko, and V. E. Slyn’ko, Semicond. Sci. Technol. 27, 015019 (2012).
E. P. Skipetrov, A. N. Golovanov, A. V. Knotko, E. I. Slyn’ko, and V. E. Slyn’ko, Semiconductors 46, 741 (2012).
S. D. Ganichev, W. Prettl, and P. G. Huggard, Phys. Rev. B 71, 3882 (1993).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.I. Artamkin, A.A. Dobrovolsky, A.A. Vinokurov, V.P. Zlomanov, S.N. Danilov, V.V. Bel’kov, L.I. Ryabova, D.R. Khokhlov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 3, pp. 293–297.
Rights and permissions
About this article
Cite this article
Artamkin, A.I., Dobrovolsky, A.A., Vinokurov, A.A. et al. Photoconductivity of vanadium-doped lead telluride in the terahertz spectral region. Semiconductors 47, 319–322 (2013). https://doi.org/10.1134/S1063782613030032
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782613030032