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New system of self-assembled GaSb/GaP quantum dots

  • XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012
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Abstract

The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band.

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Correspondence to D. S. Abramkin.

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Original Russian Text © D.S. Abramkin, M.A. Putyato, A.K. Gutakovskii, B.R. Semyagin, V.V. Preobrazhenskii, T.S. Shamirzaev, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 12, pp. 1571–1575.

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Abramkin, D.S., Putyato, M.A., Gutakovskii, A.K. et al. New system of self-assembled GaSb/GaP quantum dots. Semiconductors 46, 1534–1538 (2012). https://doi.org/10.1134/S1063782612120020

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