Skip to main content
Log in

Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors

Semiconductors Aims and scope Submit manuscript

    We’re sorry, something doesn't seem to be working properly.

    Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

Abstract

The technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors is studied. The dependences of the reactive ion etch rate of SiC in the inductively coupled plasma discharge on the pressure of the SF6/O2/Ar gas mixture (5–40 mTorr), the high-frequency power applied to the bottom electrode (200–300 W), the working gas flow ratio (5 : 1 : (0–10)), and the bottom electrode temperatures (5–50°C) are studied. Based on these dependences, the hole etching process on 76-mm-diameter SiC substrates 50 and 100 μm thick is developed. The process features smooth etched-surface morphology, a high rate (1 μm/min), and low high-frequency power deposited into the inductively coupled plasma discharge (1000 W). The developed process of hole etching in SiC substrates is characterized by the selectivity coefficient S = 12 and the anisotropy coefficient A = 13. Films based on NiB are recommended as masks for etching through holes into SiC substrates. The processes of through-hole metallization by the electrochemical deposition of Ni and Au layers are developed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C. Cismaru, H. Banbrook, H. Shen, and P. J. Zampardi, in Proceedings of the CSMANTECH Conference (Palm Springs, USA, 2011).

    Google Scholar 

  2. TriQuint 0. 35-μm Power pHEMT 3MI Process Data Sheet.

  3. M. Rosker, C. Bozada, H. Dietrich, and A. Hung, in Proceedings of the CSMANTECH Conference (Tampa, USA, 2009).

  4. C. Martin, in Proceedings of the CSMANTECH Conference (Miami, USA, 2004).

  5. H. Steiglauer, G. Bödege, D. Öttlin, M. Ilgen, H. Blanck, and D. Behammer, in Proceedings of the CSMANTECH Conference (Tampa, USA, 2009).

  6. L. F. Voss, K. Ip, and S. J. Pearton, J. Vac. Sci. Technol. B 26, 487 (2008).

    Article  Google Scholar 

  7. N. Okamoto, T. Ohki, S. Masuda, and M. Kanamura, in Proceedings of the CSMANTECH Conference (Tampa, USA, 2009).

  8. J. Ruan, S. Roadman, C. Lee, C. Sellers, and M. Regan, in Proceedings of the CSMANTECH Conference (Tampa, USA, 2009).

  9. J. Ruan, S. Roadman, and W. Skelton, in Proceedings of the CSMANTECH Conference (Portland, USA, 2009).

  10. E. J. H. Collart, J. A. G. Baggerman, and R. J. Visser, in Proceedings of the ISPC-10 Conference (Bochum, Germany, 1991), 2.2-21, p. 2.

  11. A. N. Campbell, A. W. Mullendore, C. R. Hills, and J. B. Vandersande, J. Mater. Sci. 23, 4049 (1988).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to K. Yu. Osipov.

Additional information

Original Russian Text © K.Yu. Osipov, L.E. Velikovskiy, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 9, pp. 1239–1243.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Osipov, K.Y., Velikovskiy, L.E. Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors. Semiconductors 46, 1216–1220 (2012). https://doi.org/10.1134/S1063782612090175

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782612090175

Keywords

Navigation