Abstract
The technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors is studied. The dependences of the reactive ion etch rate of SiC in the inductively coupled plasma discharge on the pressure of the SF6/O2/Ar gas mixture (5–40 mTorr), the high-frequency power applied to the bottom electrode (200–300 W), the working gas flow ratio (5 : 1 : (0–10)), and the bottom electrode temperatures (5–50°C) are studied. Based on these dependences, the hole etching process on 76-mm-diameter SiC substrates 50 and 100 μm thick is developed. The process features smooth etched-surface morphology, a high rate (1 μm/min), and low high-frequency power deposited into the inductively coupled plasma discharge (1000 W). The developed process of hole etching in SiC substrates is characterized by the selectivity coefficient S = 12 and the anisotropy coefficient A = 13. Films based on NiB are recommended as masks for etching through holes into SiC substrates. The processes of through-hole metallization by the electrochemical deposition of Ni and Au layers are developed.
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Original Russian Text © K.Yu. Osipov, L.E. Velikovskiy, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 9, pp. 1239–1243.
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Osipov, K.Y., Velikovskiy, L.E. Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors. Semiconductors 46, 1216–1220 (2012). https://doi.org/10.1134/S1063782612090175
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DOI: https://doi.org/10.1134/S1063782612090175