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Effect of γ-ray radiation on electrical properties of heat-treated Tb x Sn1 − x Se single crystals

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Abstract

The effect of γ-ray radiation on the electrical properties of heat-treated Tb0.01Sn0.99Se (sample 1) and Tb0.05Sn0.95Se (sample 2) samples is studied. It is found that, as a result of irradiation with γ-ray 1.25-MeV photons, the charge-carrier concentration decreases in the temperature range T = 77−200 K by 17 and 6.3% for samples 1 and 2, respectively. It is assumed that, in the course of irradiation with γ-ray photons, terbium impurity atoms are located between sites of the crystal lattice; in addition, Frenkel defects are formed.

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Authors and Affiliations

  1. Azerbaijan State Pedagogical University, Az-1000, Baku, Azerbaijan

    J. I. Huseynov & T. A. Jafarov

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  1. J. I. Huseynov
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  2. T. A. Jafarov
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Correspondence to J. I. Huseynov.

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Original Russian Text © J.I. Huseynov, T.A. Jafarov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 4, pp. 447–449.

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Huseynov, J.I., Jafarov, T.A. Effect of γ-ray radiation on electrical properties of heat-treated Tb x Sn1 − x Se single crystals. Semiconductors 46, 430–432 (2012). https://doi.org/10.1134/S1063782612040082

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  • DOI: https://doi.org/10.1134/S1063782612040082

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