Abstract
The Raman spectra of semiconductor structures based on erbium biphthalocyanine molecules and chlorine-substituted europium-lutetium triphthalocyanine molecules are studied on excitation with Ar+ laser radiation at the wavelength 514 nm. The data on the spectral position of Raman intensity peaks related to vibronic states of the basic molecular groups forming the semiconductor are obtained. Raman lines irrelevant to the known vibronic states of the basic phthalocyanine molecular groups are observed in the ranges 100–500 and 500–900 cm−1. It is shown that, in the spectra of triphthalocyanine, some lines are structurally complex and shifted with respect to the characteristic lines of molecular groups by several inverse centimeters.
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Original Russian Text © I.A. Belogorokhov, D.A. Mamichev, M.A. Dronov, V.E. Pushkarev, L.G. Tomilova, D.R. Khokhlov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 8, pp. 1078–1083.
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Belogorokhov, I.A., Mamichev, D.A., Dronov, M.A. et al. Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules. Semiconductors 44, 1044–1049 (2010). https://doi.org/10.1134/S1063782610080166
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DOI: https://doi.org/10.1134/S1063782610080166