Abstract
Low-temperature (5K) photoluminescence of silicon substrates in the range 0.8–1.2 eV is studied before and after deposition of polycrystalline diamond films. The diamond films were deposited in the microwave plasma onto high-purity dislocation-free silicon (with the resitivity ρ ≈ 3 kΩ cm) subjected to mechanical polishing or more delicate chemical and mechanical polishing. The deposition temperature was 750–850°C. In the photoluminescence spectra of the samples with the substrates polished chemically and mechanically, two lines, D 1 and D 2, corresponding to the dislocation-related emission are recorded. Generation of dislocations in the substrates is caused by efficient adhesion of the diamond film and, as a result, by internal stresses that relax with the formation of dislocations. The experimental spectra are practically identical to the photoluminescence spectra observed in silicon (ρ ≈ 100 Ω cm) with the density of dislocations ∼104 cm−2.
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Original Russian Text © D.F. Aminev, V.S. Bagaev, T.I. Galkina, A.Yu. Klokov, V.S. Krivobok, V.G. Ralchenko, A.V. Savel’ev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 9, pp. 1199–1203.
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Aminev, D.F., Bagaev, V.S., Galkina, T.I. et al. Photoluminescence of silicon after deposition of polycrystalline diamond films. Semiconductors 43, 1159–1163 (2009). https://doi.org/10.1134/S1063782609090103
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DOI: https://doi.org/10.1134/S1063782609090103