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Thermal, transport, and magnetotransport properties of free charge carriers in Mn-doped structures with a GaAs/InGaAs/GaAs quantum well

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Abstract

The results of investigation of the magnetic and transport properties of a GaAs/InGaAs/GaAs quantum well delta-doped with carbon and manganese from different sides and containing a ferromagnetic phase are analyzed. A thermodynamic model is formulated and the composition of a system consisting of neutral Mn atoms, Mn ions, and holes in the quantum well is calculated for determining the concentration of free charge carriers. The contributions to the resistance from different mechanisms of hole scattering are calculated, and good agreement with the experimental temperature dependences of the resistance is attained. The calculated and experimental values of the negative magnetoresistance associated with variation in the contribution of scattering from magnetic ions of the spin-polarized system of charge carriers are found to be in quantitative agreement.

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Authors and Affiliations

  1. Moscow State University, Moscow, 119991, Russia

    V. A. Kulbachinskii

  2. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    L. Yu. Shchurova

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  1. V. A. Kulbachinskii
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  2. L. Yu. Shchurova
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Correspondence to V. A. Kulbachinskii.

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Original Russian Text © V.A. Kulbachinskii, L.Yu. Shchurova, 2009, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 136, No. 1, pp. 135–147.

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Kulbachinskii, V.A., Shchurova, L.Y. Thermal, transport, and magnetotransport properties of free charge carriers in Mn-doped structures with a GaAs/InGaAs/GaAs quantum well. J. Exp. Theor. Phys. 109, 117–127 (2009). https://doi.org/10.1134/S1063776109070152

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  • DOI: https://doi.org/10.1134/S1063776109070152

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