Abstract
Using TCAD modeling, the effect of changing the FinFET structure parameters, such as gate stack layer sizes, fin shape, or doping levels, on the electrical characteristics of the device is studied.
This is a preview of subscription content, log in via an institution to check access.
REFERENCES
Sicard, E., Introducing 7-nm FinFET technology in microwind, https://hal.archives-ouvertes.fr/hal-01558775/ document.
Mohammed, M.U., Nizam, A., and Chowdhury, M.H., Performance stability analysis of SRAM cells based on different FinFET devices in 7nm technology, in Proceedings of the 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Burlingame: IEEE, 2018, pp. 1–3.
Sicard, E., Introducing 14-nm FinFET technology in microwind, 2017. https://hal.archives-ouvertes.fr/hal-01541171/document.
Petrosyants, K.O. et al., TCAD modeling of nanoscale bulk FinFET structures with account of radiation exposure, Izv. Vyssh. Uchebn. Zaved., Elektron., 2021, vol. 26, no. 5, pp. 374–386.
Gaynor, B.D. and Hassoun, S., Fin shape impact on FinFET leakage with application to multithreshold and ultralow-leakage FinFET design, IEEE Trans. Electron Dev., 2014, vol. 61, no. 8, pp. 2738–2744.
Baravelli, E., Marchi, L., and Speciale, N., Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins, Solid-State Electron., 2009, vol. 53, pp. 1303–1312.
Kawasaki, H. et al., Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond, in Proceedings of the 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore: IEEE, 2009, pp. 1–4.
Liu, Y. et al., A highly threshold voltage-controllable 4T FinFET with an 8.5-nm-thick Si-Fin channel, IEEE Electron Dev. Lett., 2004, vol. 25, no. 7, pp. 510–512.
Magnone, P. et al., Matching performance of FinFET devices with fin widths down to 10 nm, IEEE Electron Dev. Lett., 2009, vol. 30, no. 12, pp. 1374–1376.
Guillorn, M. et al., FinFET performance advantage at 22 nm: An AC perspective, in Proceedings of the 2008 Symposium on VLSI Technology, Honolulu, USA: IEEE, 2008, pp. 12–13.
Wu, X., Chan, P.C.H., and Chan, M., Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET, IEEE Trans. Electron Dev., 2005, vol. 52, no. 1, pp. 63–68. https://doi.org/10.1109/TED.2004.841334
Li, K.-S. et al., Sub-60mV-swing negative-capacitance FinFET without hysteresis, in Proceedings of the 2015 IEEE International Electron Devices Meeting (IEDM), Washington, USA: 2015, pp. 22.6.1–22.6.4.
Fried, D.M., Duster, J.S., and Kornegay, K.T., Improved independent Gate N-type FinFET fabrication and characterization, IEEE Electron Dev. Lett., 2003, vol. 24, no. 9, pp. 592–594. https://doi.org/10.1109/LED.2003.815946
Lin, C.-H., Kambhampati, R., Miller, R.J., Hook, T.B., Bryant, A., Haensch, W., Oldiges, P., Lauer, I., Yamashita, T., Basker, V., Standaert, T., Rim, K., Leobandung, E., Bu, H., and Khare, M., Channel doping impact on FinFETs for 22 nm and beyond, in Proceedings of the 2012 Symposium on VLSI Technology (VLSIT), Honolulu, USA: IEEE, 2012, pp. 15–16. https://doi.org/10.1109/VLSIT.2012.6242438
Li, B. et al., Process variation dependence of total ionizing dose effects in bulk nFinFETs, Microelectron. Reliab., 2018, vols. 88–90, pp. 946–951.
Funding
This work was supported by a joint grant from the Russian Foundation for Basic Research and the China Scientific Research Foundation, grant no. 20-57-53004.
Author information
Authors and Affiliations
Corresponding authors
Ethics declarations
The authors declare that they have no conflicts of interest.
Rights and permissions
About this article
Cite this article
Petrosyants, K.O., Silkin, D.S. & Popov, D.A. Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools. Russ Microelectron 51, 644–648 (2022). https://doi.org/10.1134/S1063739722080054
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063739722080054