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Features of the growth of amorphous silicon thin films synthesized by magnetron sputtering

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Abstract

Features of the growth of amorphous silicon films synthesized by DC magnetron sputtering are studied. The effect of the working-gas pressure on the film-surface roughness and growth rate is investigated. It is shown that the film-growth rate decreases with increasing gas pressure in the working chamber and film-surface roughness changes in proportion to the pressure variation. The obtained experimental dependences can be used in modifying the technique for growing films with specified characteristics.

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Authors and Affiliations

  1. Saratov State University, Saratov, 410012, Russia

    D. M. Mitin, V. A. Aleksandrov, A. A. Skaptsov, S. B. Venig & A. A. Serdobintsev

  2. Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences, St. Petersburg, 410019, Russia

    V. A. Aleksandrov & A. A. Serdobintsev

Authors
  1. D. M. Mitin
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  2. V. A. Aleksandrov
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  3. A. A. Skaptsov
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  4. S. B. Venig
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  5. A. A. Serdobintsev
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Correspondence to D. M. Mitin.

Additional information

Original Russian Text © D.M. Mitin, V.A. Aleksandrov, A.A. Skaptsov, S.B. Venig, A.A. Serdobintsev, 2015, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2015, No. 6, pp. 31–34.

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Mitin, D.M., Aleksandrov, V.A., Skaptsov, A.A. et al. Features of the growth of amorphous silicon thin films synthesized by magnetron sputtering. J. Surf. Investig. 9, 555–557 (2015). https://doi.org/10.1134/S1027451015030313

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  • DOI: https://doi.org/10.1134/S1027451015030313

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