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Comparison of the efficiency of 63Ni beta-radiation detectors made from silicon and wide-gap semiconductors

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Abstract

The current induced by the radiation from a 63Ni film of variable thickness is simulated taking into account the real spectrum of emitted electrons and their angular distribution for GaN. The efficiency of β-radiation detectors made from Si and SiC is estimated based on the results obtained in this paper and previously. Using a scanning electron microscope the efficiency of β-radiation detectors made from Si and SiC under conditions corresponding to β radiation from a Ni film with a thickness of 3 μm and activity of 10 mCi/cm2 is analyzed. It is shown that the efficiency of real Si-based structures is virtually as good as the efficiency of SiC-based structures.

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Authors and Affiliations

  1. Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    S. I. Zaitsev, V. N. Pavlov, A. A. Svintsov & E. B. Yakimov

  2. National Research Center Kurchatov Institute, Moscow, 123182, Russia

    V. Ya. Panchenko & M. A. Polikarpov

Authors
  1. S. I. Zaitsev
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  2. V. N. Pavlov
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  3. V. Ya. Panchenko
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  4. M. A. Polikarpov
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  5. A. A. Svintsov
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  6. E. B. Yakimov
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Corresponding author

Correspondence to E. B. Yakimov.

Additional information

Original Russian Text © S.I. Zaitsev, V.N. Pavlov, V.Ya. Panchenko, M.A. Polikarpov, A.A. Svintsov, E.B. Yakimov, 2014, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2014, No. 9, pp. 9–12.

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Zaitsev, S.I., Pavlov, V.N., Panchenko, V.Y. et al. Comparison of the efficiency of 63Ni beta-radiation detectors made from silicon and wide-gap semiconductors. J. Surf. Investig. 8, 843–845 (2014). https://doi.org/10.1134/S1027451014050231

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  • DOI: https://doi.org/10.1134/S1027451014050231

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