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The effect of the Mn delta layer on the photosensitivity spectra of structures with In x Ga1 − x As/GaAs quantum wells

  • Proceedings of International Symposium “Nanophysics and Nanoelectronics-2010” (Nizhny Novgorod State University, Nizhny Novgorod, Russia)
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Abstract

The effect of embedding a Mn delta layer in heteronanostructures with an In x Ga1 − x As/GaAs single quantum well on the photosensitivity spectra of the quantum well in Schottky barrier diode structures has been investigated. It is shown that the embedding of a Mn delta layer results in the broadening of exciton peak and decrease in the photosensitivity of the quantum well until complete disappearance of photosensitivity at the spacer thickness of 1.5 nm. The suppression of the quantum well photosensitivity is mainly due to the increase in the concentration of defects such as recombination centers in the quantum well during embedding of a Mn delta layer.

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Authors and Affiliations

  1. Lobachevsky State University, Nizhni Novgorod, Russia

    A. P. Gorshkov, I. A. Karpovich, D. O. Filatov, E. D. Pavlova & M. V. Dorokhin

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  1. A. P. Gorshkov
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  2. I. A. Karpovich
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  3. D. O. Filatov
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  4. E. D. Pavlova
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  5. M. V. Dorokhin
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Original Russian Text © A.P. Gorshkov, I.A. Karpovich, D.O. Filatov, E.D. Pavlova, M.V. Dorokhin, 2011, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 6, pp. 63–65.

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Gorshkov, A.P., Karpovich, I.A., Filatov, D.O. et al. The effect of the Mn delta layer on the photosensitivity spectra of structures with In x Ga1 − x As/GaAs quantum wells. J. Surf. Investig. 5, 563–565 (2011). https://doi.org/10.1134/S1027451011060103

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  • DOI: https://doi.org/10.1134/S1027451011060103

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