Abstract
The luminescence photodynamics of an array of InP/InAsP/InP nanowires formed via molecular beam epitaxy onto a Si(III) substrate is investigated in this work. Using several kinetic models, the experimental data acquired by a 633-nm room-temperature laser excitation have been analyzed. The kinetics of luminescence decay of the InAsP nanoinsert is shown to be best described in the context of the model of contact quenching. The total time of decay of the excited state (the radiative lifetime) of the InAsP nanoinsert is estimated to be τ ~ 40 ns. The reasons of unexpectedly long duration of the excitation transfer from InP are discussed as well.
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Funding
This work was supported by the Ministry of Science and Higher Education of the Russian Federation, state order no. 16.9791.2017/8.9. The samples were grown with the financial support of the Russian Science Foundation, project no. 19-72-30010.
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Translated by O. Maslova
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Kulagina, A.S., Khrebtov, A.I., Reznik, R.R. et al. The Role of Physical Models in the Description of Luminescence Kinetics of Hybrid Nanowires. Opt. Spectrosc. 128, 119–124 (2020). https://doi.org/10.1134/S0030400X20010129
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DOI: https://doi.org/10.1134/S0030400X20010129