Abstract
The inertness of the cleaved (0001) surface of a Bi2Se3 single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomic-force and scanning tunneling microscopy and spectroscopy. No intrinsic bismuth and selenium oxides are formed on the surface after a month of storage in air. Atomically flat surfaces with macroscopic sizes (∼1 cm2) and rms roughness less than 0.1 nm have been prepared, and (1 × 1)-(0001) Bi2Se3 atomic structure has been resolved. The tunneling conductance measurements have shown that the energy dependence of the surface density of states is quasilinear in the band gap of Bi2Se3.
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Original Russian Text © O.E. Tereshchenko, K.A. Kokh, V.V. Atuchin, K.N. Romanyuk, S.V. Makarenko, V.A. Golyashov, A.S. Kozhukhov, I.P. Prosvirin, A.A. Shklyaev, 2011, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2011, Vol. 94, No. 6, pp. 500–503.
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Tereshchenko, O.E., Kokh, K.A., Atuchin, V.V. et al. Stability of the (0001) surface of the Bi2Se3 topological insulator. Jetp Lett. 94, 465–468 (2011). https://doi.org/10.1134/S0021364011180159
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DOI: https://doi.org/10.1134/S0021364011180159