Abstract
It was found that tunneling current through a nanometer scale structure with strongly coupled localized states causes spatial redistribution of localized charges induced by Coulomb correlations. We present here theoretical investigation of this effect by means of Heisenberg equations for localized states electron filling numbers. This method makes it possible to take into account pair correlations of local electron density exactly. It is shown that inverse occupation of the two-level system caused by Coulomb correlations appears in particular range of applied bias. Described effects can give a possibility of charge manipulation in the proposed system. We also expect that described results can be observed in tunneling structures with impurities or with small quantum dots.
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Arseyev, P.I., Maslova, N.S. & Mantsevich, V.N. Correlation induced switching of the local spatial charge distribution in a two-level system. Jetp Lett. 94, 390–396 (2011). https://doi.org/10.1134/S0021364011170048
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DOI: https://doi.org/10.1134/S0021364011170048