Abstract
The electron-hole liquid (EHL) in SiGe layers of Si/Si1 − x Ge x /Si quantum-confinement heterostructures is discovered. It is composed of quasi-two-dimensional holes in the quantum well formed by the SiGe layer and quasi-three-dimensional electrons, which occupy a wider region of space centered on this layer. The densities of electrons and holes in the EHL are determined to be p 0 ≈ 8.5 × 1011 cm−2 and n 0 ≈ 4.8 × 1018 cm−3, respectively. It is demonstrated that the gas phase consists of excitons and excitonic molecules. The conditions on the band parameters of the structure under which the formation of the EHL of this kind and biexcitons is possible are formulated.
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Original Russian Text © T.M. Burbaev, M.N. Gordeev, D.N. Lobanov, A.V. Novikov, M.M. Rzaev, N.N. Sibeldin, M.L. Skorikov, V.A. Tsvetkov, D.V. Shepel, 2010, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2010, Vol. 92, No. 5, pp. 341–345.
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Burbaev, T.M., Gordeev, M.N., Lobanov, D.N. et al. Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures. Jetp Lett. 92, 305–309 (2010). https://doi.org/10.1134/S002136401017008X
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DOI: https://doi.org/10.1134/S002136401017008X