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General aspects of the growth of In-In2O3 films

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Abstract

Transformations in indium nanolayers have been studied by optical spectroscopy, microscopy, and gravimetry in relation to the thickness of the layers (2–147 nm) and heat treatment temperature (473–873 K) and time (0–120 min). The kinetic curves for the degree of conversion are adequately described by a linear, inverse logarithmic, parabolic, or logarithmic law, depending on the thickness of the indium film and heat treatment temperature. We have measured the contact potential difference across the In and In2O3 films and the photovoltage in the In-In2O3 system. The results have been used to derive the energy band diagram of the In-In2O3 system. A model has been proposed for the thermal transformation of indium films, which involves oxygen adsorption steps, charge carrier redistribution in the In-In2O3 interfacial field (positive on the In2O3 side), and In2O3 formation.

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Authors and Affiliations

  1. Kemerovo State University, ul. Krasnaya 6, Kemerovo, 650043, Russia

    E. P. Surovoi & G. O. Eremeeva

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  1. E. P. Surovoi
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  2. G. O. Eremeeva
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Original Russian Text © E.P. Surovoi, G.O. Eremeeva, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 7, pp. 819–824.

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Surovoi, E.P., Eremeeva, G.O. General aspects of the growth of In-In2O3 films. Inorg Mater 48, 716–720 (2012). https://doi.org/10.1134/S0020168512070175

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  • DOI: https://doi.org/10.1134/S0020168512070175

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