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Formation energies of native point defects in II–VI crystals

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The formation energies of point defects in II–VI crystals have been evaluated from Hall measurement results and calculated by a thermodynamic method and the extended Hückel method. The energies obtained by different techniques are in satisfactory agreement with each other and with data in the literature.

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References

  1. Fochuk, P., Grill, R., and Panchuk, O., The Nature of Point Defects in CdTe, J. Electron. Mater., 2006, vol. 35, no. 6, pp. 1354–1359.

    Article  CAS  Google Scholar 

  2. Kosyak, V.V. and Opanasyuk, A.S., Calculation of Fermi Level Location and Point Defects Ensemble in CdTe Single Crystals and Thin Films, Semicond. Phys. Quantum Electron. Optoelectron., 2007, vol. 10, no. 3, pp. 95–102.

    CAS  Google Scholar 

  3. Grill, R., Franc, J., and Höschl P. Semi-Insulating Te-Saturated CdTe, IEEE Trans. Nucl. Sci., 2005, vol. 52, no. 5, pp. 1925–1931.

    Article  CAS  Google Scholar 

  4. Prokopiv, V.V., Fochuk, P.M., Gorichok, I.V., and Vergak, E.V., Thermodynamics Analysis of Defects Created Processes in the Crystals of Cadmium Telluride in the Conditions of High Temperature Annealing, Semicond. Phys. Quantum Electron. Optoelectron., 2009, vol. 12, no. 13, pp. 412–416.

    CAS  Google Scholar 

  5. Ganina, N.V., Shmugurov, V.A., and Fistul’, V.I., Quantum-Chemical Determination of the Enthalpy of Formation of Monovacancies in Semiconductors, Fiz. Khim. Tverd. Tila, 2004, vol. 5, no. 3, pp. 430–435.

    CAS  Google Scholar 

  6. Ganina, N.V., Shmugurov, V.A., and Fistul’, V.I., Quantum-Chemical Determination of the Enthalpy of Formation of Monovacancies in III–V Semiconductors, Fiz. Khim. Tverd. Tila, 2004, vol. 6, no. 1, pp. 94–95.

    Google Scholar 

  7. Ganina, N.V., Shmugurov, V.A., and Fistul’, V.I., Enthalpy of Formation of Antisite Defects in III–V Compounds, Fiz. Khim. Tverd. Tila, 2006, vol. 7, no. 2, pp. 271–273.

    CAS  Google Scholar 

  8. Verner, V.D. and Nichugovskii, D.K., Formation Energy of Metal Vacancies in Gallium Arsenide and Indium Antimonide, Fiz. Tverd. Tela (Leningrad), 1973, vol. 15, pp. 2012–2013.

    Google Scholar 

  9. Berding, M.A., Native Defects in CdTe, Phys. Rev., 1999, vol. 60, no. 12, pp. 8943–8950.

    Article  CAS  Google Scholar 

  10. Su-Huai, W. and Zhang, S., Chemical Trends of Defect Formation and Doping Limit in II–VI Semiconductors: The Case of CdTe, Phys. Rev. B: Condens. Matter Mater. Phys., 2002, vol. 66, paper 155 211.

  11. Nobel, D., Phase Equilibria and Semiconducting Properties of Cadmium Telluride, Philips Res. Rep., 1959, vol. 14, pp. 361–492.

    Google Scholar 

  12. Fochuk, P.M., Panchuk, O.E., and Shcherbak, L.P., The Nature of Predominant Point Defects in CdTe Crystals: Cd-Rich Region, Fiz. Khim. Tverd. Tila, 2004, vol. 5, no. 1, pp. 136–141.

    CAS  Google Scholar 

  13. Rumer, Yu.B., Termodinamika, statisticheskaya fizika i kinetika (Thermodynamics, Statistical Physics, and Kinetics), Moscow: Nauka, 1972.

    Google Scholar 

  14. Chern, S.S., Vydyanath, H.R., and Kroger, F.A., The Defect Structure of CdTe: Hall Data, J. Phys. Chem. Solids, 1975, vol. 14, no. 1, pp. 33–43.

    CAS  Google Scholar 

  15. Bobrova, E.A. Klevkov, Yu.V., Medvedev, S.A., and Plotnikov, A.F., A DLTS Study of Deep Levels in the Band Gap of Textured Stoichiometric p-CdTe Polycrystals, Semiconductors, 2002, vol. 36, no. 12, pp. 1341–1346.

    Article  CAS  Google Scholar 

  16. Parfenyuk, O.A., Ilashchuk, M.I., Ulyanitskii, K.S., et al., Electrical Properties and Low-Temperature Luminescence of Si-Doped CdTe Crystals, Semiconductors, 2006, vol. 40, no. 2, pp. 143–147.

    Article  CAS  Google Scholar 

  17. Sakalas, A., Tochechnye defekty v poluprovodnikovykh soedineniyakh (Point Defects in Compound Semiconductors), Vilnius: Mokslas, 1988.

    Google Scholar 

  18. Medvedev, S.A., Vvedenie v tekhnologiyu poluprovodnikovykh materialov (Introduction to Semiconductor Materials Technology), Moscow: Vysshaya Shkola, 1970.

    Google Scholar 

  19. Harrison, W., Electronic Structure and Properties of Solids, San Francisco: Freeman, 1980.

    Google Scholar 

  20. Lany, S., Ostheimer, V., Wolf, H., and Wichert, Th., Vacancies in CdTe: Experiment and Theory, Phys. B, (Amsterdam, Neth.), 2001, vols. 308–310, pp. 958–962.

    Google Scholar 

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Authors and Affiliations

  1. Stefanyk National University, Galytska ul. 201, Ivano-Frankivsk, 76025, Ukraine

    I. V. Gorichok, U. M. Pysklynets & V. V. Prokopiv

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  1. I. V. Gorichok
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  2. U. M. Pysklynets
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  3. V. V. Prokopiv
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Correspondence to U. M. Pysklynets.

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Original Russian Text © I.V. Gorichok, U.M. Pysklynets, V.V. Prokopiv, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 2, pp. 162–166.

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Gorichok, I.V., Pysklynets, U.M. & Prokopiv, V.V. Formation energies of native point defects in II–VI crystals. Inorg Mater 48, 119–122 (2012). https://doi.org/10.1134/S0020168512020100

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  • DOI: https://doi.org/10.1134/S0020168512020100

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