Abstract
Experimental results obtained by studying the main characteristics of a millimeter-submillimeterwave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 9, 2005, pp. 1117–1121.
Original Russian Text Copyright © 2005 by Morozov, K. Smirnov, A. Smirnov, Lyakhov, Goltsman.
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Morozov, D.V., Smirnov, K.V., Smirnov, A.V. et al. A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Semiconductors 39, 1082–1086 (2005). https://doi.org/10.1134/1.2042603
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DOI: https://doi.org/10.1134/1.2042603