Abstract
A new design of spin transistor based on half-metallic ferromagnets (referred to as a spin half-metallic transistor) is suggested, and its current-voltage characteristics are studied theoretically. Like a bipolar transistor, the new device can amplify current. At the same time, the properties of a spin half-metallic transistor depend considerably on the mutual orientation of the magnetizations of its three contacts. We also propose a device based on an F ↑-F ↓ junction. This device consists of two single-domain half-metallic parts with opposite magnetizations. There is a range of voltages where the current-voltage characteristics of an F ↑-F ↓ junction and a semiconductor diode are similar. The behavior of an F ↑-F ↓ junction under different conditions is studied.
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References
G. A. Prinz, Science 282, 1660 (1988); I. Zutic, cond-mat/0112368 (2001).
M. N. Bainbich et al., Phys. Rev. Lett. 61, 2472 (1987); G. Bransch et al., Phys. Rev. B 39, 4829 (1989).
M. A. M. Gujs and G. E. W. Bauer, Adv. Phys. 46, 285 (1997); V. V. Dobrovitski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) and A. K. Zvezdin, Usp. Fiz. Nauk 166, 439 (1996) [Phys. Usp. 39, 407 (1996)].
A. K. Zvezdin and S. N. Utochkin, Pis’ma Zh. Éksp. Teor. Fiz. 57, 433 (1993) [JETP Lett. 57, 439 (1993)].
R. Meservey and P. M. Tedrow, Phys. Rep. 238, 173 (1994).
N. Garcia, M. Munoz, and Y.-W. Zhao, Phys. Rev. Lett. 82, 2923 (1999).
G. Tatara, Y.-W. Zhao, M. Munoz, and N. Garcia, Phys. Rev. Lett. 83, 2030 (1999); M. Munoz et al., Appl. Phys. Lett. 79, 2946 (2001); N. Garcia et al., Appl. Phys. Lett. 79, 4550 (2001).
A. K. Zvezdin and A. F. Popkov, Pis’ma Zh. Éksp. Teor. Fiz. 71, 304 (2000) [JETP Lett. 71, 209 (2000)]; H. Imamura, N. Kobayashi, S. Takahashi, et al., Phys. Rev. Lett. 84, 1003 (2000).
L. R. Tagirov, B. P. Vodopyanov, and K. B. Efetov, Phys. Rev. B 63, 104428 (2001); L. L. Savchenko, A. K. Zvezdin, A. F. Popkov, et al., Fiz. Tverd. Tela (St. Petersburg) 43, 1449 (2000).
P. C. Van Son, H. Van Kempen, and P. Wyder, Phys. Rev. Lett. 58, 2271 (1987).
M. V. Tsoi et al., Phys. Rev. Lett. 80, 4281 (1998).
A. G. Aronov, JETP Lett. 24, 32 (1976).
M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985); M. Johnson and R. H. Silsbee, Phys. Rev. B 35, 4959 (1987); Y. Ji et al., Phys. Rev. Lett. 86, 5585 (2001).
S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
M. Johnson, Science 260, 320 (1993).
H. Y. Hwang, S.-W. Cheong, N. P. Ong, et al., Phys. Rev. Lett. 77, 2041 (1996).
J. M. D. Coey et al., Phys. Rev. Lett. 87, 026601 (2001); J. M. D. Coey, Phys. Rev. B 64, 020407-1 (2001); J. M. D. Coey, Phys. Rev. Lett. 80, 3815 (1998).
J. M. De Teresa et al., Phys. Rev. Lett. 82, 4288 (1999).
A. Fert and I. A. Campbell, J. Phys. (Paris), Colloq. 32, C1 (1971).
T. Valet and A. Fert, Phys. Rev. B 48, 7099 (1993).
Yu. A. Uspenskii, E. T. Kulatov, and S. V. Khalilov, Zh. Éksp. Teor. Fiz. 107, 1708 (1995) [JETP 80, 952 (1995)].
A. K. Zvezdin and V. A. Kotov, Modern Magnetooptics and Magnetooptical Materials (IOP, Bristol, 1997), Sec. 5.2.
E. I. Rashba, Phys. Rev. B 62, R16267 (2000).
G. Vignale and M. Flatté, cond-mat/0202002 (2002).
E. I. Wolf, Principles of Electron Tunneling Spectroscopy (Oxford University Press, 1985; Naukova Dumka, Kiev, 1990).
M. Tinkkham, Introduction to Superconductivity (McGraw-Hill, New York, 1975; Atomizdat, Moscow, 1980).
I. V. Savel’ev, Principles of Theoretical Physics (Nauka, Moscow, 1996), Vol. 2.
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).
R. Vlutters, O. M. J. van’t Erve, R. Jansen, et al., Phys. Rev. B 65, 024416 (2002).
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 73, No. 4, 2003, pp. 53–58.
Original Russian Text Copyright © 2003 by Zvezdin, Mishchenko, Khval’kovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).
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Zvezdin, A.K., Mishchenko, A.S. & Khval’kovskii, A.V. Current-voltage characteristics of a spin half-metallic transistor. Tech. Phys. 48, 431–436 (2003). https://doi.org/10.1134/1.1568484
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DOI: https://doi.org/10.1134/1.1568484