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GaAsN-on-GaAs MBE using a DC plasma source

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Abstract

A new dc plasma source for MBE growth of GaAsN layers is suggested. The efficiency of nitrogen incorporation, crystal perfection, surface morphology, and luminescent properties of the epilayers vs. operation conditions of the source are studied.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. E. Zhukov, E. S. Semenova & V. M. Ustinov

  2. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California, 94720-1760, USA

    E. R. Weber

Authors
  1. A. E. Zhukov
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  2. E. S. Semenova
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  3. V. M. Ustinov
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  4. E. R. Weber
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Additional information

__________

Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 71, No. 10, 2001, pp. 59–64.

Original Russian Text Copyright © 2001 by Zhukov, Semenova, Ustinov, Weber.

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Zhukov, A.E., Semenova, E.S., Ustinov, V.M. et al. GaAsN-on-GaAs MBE using a DC plasma source. Tech. Phys. 46, 1265–1269 (2001). https://doi.org/10.1134/1.1412061

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  • DOI: https://doi.org/10.1134/1.1412061

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