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Evolution of photoluminescence spectra of stoichiometric CdTe: Dependence on the purity of starting components

  • Electronic and Optical Properties of Semiconductors
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Abstract

A new sublimation method of material purification in a vacuum based on the crystal-vapor-crystal phase transformation is outlined. A basic design of growth reactor and the main parameters of CdTe fine purification are given. With the use of low-temperature photoluminescence (PL), the purification dynamics are revealed. This process is characterized by a complete decomposition of various complexes and by a sharp decrease in the concentration of both shallow-and deep-level residual impurity. At the final stage of purification, a polycrystalline CdTe with stoichiometric composition is obtained, and the impurity-related emission is entirely absent in PL spectra that involve only excitonic lines. The necessity of the fine purification for starting components is experimentally confirmed. Similar results are obtained for ZnTe and ZnSe.

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References

  1. S. Medvedieff, U.S. Patent No. 5201985 (13 April 1993).

  2. S. Medvedieff and Yu. Klevkov, Application No. PCT/RU 96/00176.

  3. Y. Marfaing, Progr. Cryst. Growth Charact. 4, 317 (1981).

    Google Scholar 

  4. A. V. Kvit, Yu. V. Klevkov, S. R. Oktyabrsky, et al., Semicond. Sci. Technol. 9, 1805 (1994).

    Article  ADS  Google Scholar 

  5. A. V. Kvit, Yu. V. Klevkov, S. R. Oktyabrsky, et al., Mater. Sci. Eng., B 26, 1 (1994).

    Article  Google Scholar 

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924, Russia

    A. V. Kvit, Yu. V. Klevkov, S. A. Medvedev, V. S. Bagaev, A. V. Perestoronin & A. F. Plotnikov

Authors
  1. A. V. Kvit
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  2. Yu. V. Klevkov
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  3. S. A. Medvedev
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  4. V. S. Bagaev
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  5. A. V. Perestoronin
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  6. A. F. Plotnikov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 19–22.

Original Russian Text Copyright © 2000 by Kvit, Klevkov, Medvedev, Bagaev, Perestoronin, Plotnikov.

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Kvit, A.V., Klevkov, Y.V., Medvedev, S.A. et al. Evolution of photoluminescence spectra of stoichiometric CdTe: Dependence on the purity of starting components. Semiconductors 34, 17–20 (2000). https://doi.org/10.1134/1.1187955

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  • DOI: https://doi.org/10.1134/1.1187955

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