Abstract
Infrared absorption in strained p-type In1−x GaxAs/InP quantum wells is investigated for both possible types of strain (tensile and compressive). It is observed that the normalincidence absorption increases considerably under compressive strain (when the ground state is a heavy-hole state) and decreases under tensile strain (when the ground state is a light-hole state). The peak absorption in the compressed quantum well can attain very large values, on the order of 5000 cm−1 at a hole density ∼ 1012 cm−2; this attribute makes “compressed” p-type quantum wells attractive for IR detection applications.
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Fiz. Tekh. Poluprovodn. 33, 83–90 (January 1999)
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Stoklitskii, S.A., Murzin, V.N., Mityagin, Y.A. et al. Optical intersubband transitions in strained quantum wells utilizing In1−x GaxAs/InP solid solutions. Semiconductors 33, 72–79 (1999). https://doi.org/10.1134/1.1187650
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DOI: https://doi.org/10.1134/1.1187650