Orientation Of Thin Crystal Layer With Zincblende Structure Using Raman Scattering Extrema Method

Huasheng Wu; Jiangen Wu; Fenyuan Qu

doi:10.1117/12.951576

5 July 1989 Orientation Of Thin Crystal Layer With Zincblende Structure Using Raman Scattering Extrema Method

Huasheng Wu, Jiangen Wu, Fenyuan Qu

Proceedings Volume 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology; (1989) https://doi.org/10.1117/12.951576
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Raman Scattering Extrema Method (RSEM), originally proposed by author, to determine the orientation of a thin layer with diamond structure, is extented to zincblende structure. The Raman scattering intensities of LO and TO phonons as functions of both the orientation of this layer and the polarization direction of the incident light have been derived for a zincblende-structured thin layer. Then the orientation of the layer is determined by means of the extrema of these functions. The obtained results for GaP wafers using this method is compared with that determined by the X-ray diffraction method.

Citation Download Citation

Huasheng Wu, Jiangen Wu, and Fenyuan Qu "Orientation Of Thin Crystal Layer With Zincblende Structure Using Raman Scattering Extrema Method", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951576

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