Paper
31 May 2012 InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications
Oray O. Cellek, Hua Li, Xiao-Meng Shen, Zhiyuan Lin, Elizabeth H. Steenbergen, Ding Ding, Shi Liu, Qiang Zhang, Ha Sul Kim, Jin Fan, Michael J. DiNezza, W. Hank G. Dettlaff, Preston T. Webster, Zhaoyu He, Jing-Jing Li, Shane R. Johnson, David J. Smith, Yong-Hang Zhang
Author Affiliations +
Abstract
Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oray O. Cellek, Hua Li, Xiao-Meng Shen, Zhiyuan Lin, Elizabeth H. Steenbergen, Ding Ding, Shi Liu, Qiang Zhang, Ha Sul Kim, Jin Fan, Michael J. DiNezza, W. Hank G. Dettlaff, Preston T. Webster, Zhaoyu He, Jing-Jing Li, Shane R. Johnson, David J. Smith, and Yong-Hang Zhang "InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83533F (31 May 2012); https://doi.org/10.1117/12.925076
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Cited by 4 scholarly publications.
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KEYWORDS
Long wavelength infrared

Mid-IR

Photodetectors

Infrared radiation

Superlattices

Stereolithography

Infrared photography

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